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Same model may have multiple batches, images only for reference.
IPP80N06S2L-05 Real Image
Same model may have multiple batches, images only for reference.

IPP80N06S2L-05

Part No IPP80N06S2L-05
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO220-3
Datasheet
IPP80N06S2L-05 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 5700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 069080-IPP80N06S2L-05
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP80N06S2L-05 CAD Model

Description

The Infineon Technologies IPP80N06S2L-05 is an obsolete (EOL) electronic component.

  • Designed for: Use in applications that require high power dissipation
  • Specification: Unique
  • Suitable for: Use in various applications
  • Maximum Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $17.6380 $70.5520
8+ $14.4722 $115.7776
13+ $14.0194 $182.2522
18+ $13.5678 $244.2204
23+ $13.1150 $301.6450
30+ $11.7591 $352.7730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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