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IPS06N03LAG

Part No IPS06N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 069092-IPS06N03LAG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS06N03LAG CAD Model

Description

Infineon Technologies presents an obsolete(EOL) electronic component with an Id of 165851.

  • Supply and Demand Status: balance
  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation (Max): 83W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Temperature Range - Operating: -55°C to 175°C (TJ)
  • Case / Package: PG-TO251-3
  • Dimension: TO-251-3 Stub Leads, IPak
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 40μA
  • Max Gate Charge: 22nC @ 5V
  • Max Input Capacitance: 2653pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 5.9 mOhm @ 30A, 10V

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