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IPS105N03L G

Part No IPS105N03L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel PowerTrench® MOSFET Logic Level 40 V, 10 A, 2.1 mΩ
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-251
Continuous Drain Current (ID) 35 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 10.5 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Single
Fall Time 2.4 ns
Gate to Source Voltage (Vgs) 20 V
Height 2.39 mm
Input Capacitance 1.5 nF
Length 6.73 mm
Maximum Operating Temperature 175 °C
Max Power Dissipation 38 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 38 W
Rds On Max 10.5 mΩ
REACH SVHC No SVHC
Rise Time 14 ns
RoHS Compliant
Threshold Voltage 1 V
Turn-Off Delay Time 14 ns
Turn-On Delay Time 3.7 ns
Width 6.22 mm
Win Source Part Number 1065339-IPS105N03L G
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IPS105N03L G CAD Model

Description

The IPS105N03L G is a single N-channel MOSFET transistor from Infineon Technologies.

  • Designed for: RF applications
  • Package: TO-251
  • Drain-to-Source Voltage: 30 V
  • Continuous Drain Current: 35 A
  • Rds On Max: 10.5 mΩ
  • Gate to Source Voltage (Vgs): 20 V
  • Input Capacitance: 1.5 nF
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Excellent choice for: RF power amplifiers, RF switches, and other RF applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
515+ $0.0973 $50.1095
1,255+ $0.0799 $100.2745
1,940+ $0.0774 $150.1560
2,675+ $0.0749 $200.3575
3,455+ $0.0724 $250.1420
4,625+ $0.0649 $300.1625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,030 pieces
MOQ: 515 pcs
Order Increment : 1 pcs
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