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IPS70R600CEAKMA1

Part No IPS70R600CEAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 10.5A TO251-3  /  N-Channel 700 V 10.5A (Tc) 86W (Tc) Through Hole PG-TO251-3-11
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 0.21mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 474 pF @ 100 V
FET Feature Super Junction
Power Dissipation (Max) 86W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak
Base Product Number IPS70R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001407894
Standard Package 1,500
Win Source Part Number 1205463-IPS70R600CEAKMA1
Ultra Librarian 3D Model Ultra Librarian IPS70R600CEAKMA1 CAD Model

Description

The 1205463-IPS70R600CEAKMA1 is an N-channel MOSFET transistor from the CoolMOS™ series from Infineon Technologies.

  • Drain-Source Voltage: 700V
  • Continuous Drain Current: 10.5A (Tc)
  • Rds On: 600mOhm @ 1A, 10V
  • Gate-Source Threshold Voltage: 3.5V @ 0.21mA
  • Package: TO-251-3
  • Power Dissipation: 86W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5149 $59.2135
275+ $0.4225 $116.1875
425+ $0.4093 $173.9525
585+ $0.3962 $231.7770
755+ $0.3829 $289.0895
1,010+ $0.3433 $346.7330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,430 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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