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Same model may have multiple batches, images only for reference.
IPSH4N03LA G Real Image
Same model may have multiple batches, images only for reference.

IPSH4N03LA G

Part No IPSH4N03LA G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 90A TO251-3
Datasheet
IPSH4N03LA G Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Features N-Channel 25 V 90A (Tc) 94W (Tc) Through Hole PG-TO251-3-11
Manufacturer Infineon Technologies
Series OptiMOS™
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-251-3 Stub Leads, IPak
Case / Package PG-TO251-3-11
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number IPSH4N03LA G-ND, IPSH4N03LAG, IPSH4N03LAGX, SP000016331
Quantity per package 1500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 874875-IPSH4N03LA G
Ultra Librarian 3D Model Ultra Librarian IPSH4N03LA G CAD Model

Description

The Infineon Technologies IPSH4N03LA G is an N-Channel MOSFET transistor that operates at a voltage of 25 V and a current of 90 A.

  • Power Dissipation: 94 W
  • Package: Through-hole PG-TO251-3-11
  • Operating Temperature: -55°C to 175°C (TJ)
  • Series: OptiMOS™
  • Status: Obsolete
  • Category: Discrete Semiconductor Product
  • Popularity Rating: Medium
  • Supplied in: Tube package with 1500 pieces per package
  • REACH: Unaffected
  • ECCN: EAR99

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