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Same model may have multiple batches, images only for reference.
IPT026N10N5ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPT026N10N5ATMA1

Part No IPT026N10N5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 27A/202A 8HSOF
Datasheet
IPT026N10N5ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1203475-IPT026N10N5ATMA1
Win Source Part Number Cross
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series OptiMOS™5
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 150A, 10V
Ultra Librarian 3D Model Ultra Librarian IPT026N10N5ATMA1 CAD Model

Description

•ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21<br />

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