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IPU07N03L

Part No IPU07N03L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 30A TO-251
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package P-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069103-IPU07N03L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPU07N03L CAD Model

Description

The Infineon Technologies IPU07N03L is a MOSFET technology N-channel power transistor that is designed for use in a range of applications.

  • Maximum Power Dissipation: 83W (Tc)
  • Continuous Drain Current at 25°C: 30A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 40μA
  • Maximum Rds On at Id,Vgs: 6.5 mOhm @ 30A, 10V
  • Package: P-TO251-3
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9600 $62.4000
150+ $0.7879 $118.1850
230+ $0.7631 $175.5130
315+ $0.7385 $232.6275
405+ $0.7139 $289.1295
545+ $0.6401 $348.8545
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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