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Same model may have multiple batches, images only for reference.
IPU135N08N3G Real Image
Same model may have multiple batches, images only for reference.

IPU135N08N3G

Part No IPU135N08N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 50A TO251-3
Datasheet
IPU135N08N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 33μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1730pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069107-IPU135N08N3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPU135N08N3G CAD Model

Description

The Infineon Technologies 069107-IPU135N08N3G is a MOSFET product that features N-Channel polarity.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Mounting: Through hole
  • Package: PG-TO251-3
  • Product Status: Obsolete (EOL)

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