The IPU60R950C6 is a CoolMOS™ C6 power MOSFET from Infineon Technologies. This high-voltage MOSFET is designed for efficient power switching in a variety of applications. CoolMOS™ technology is known for its low switching losses and high robustness, making it suitable for demanding applications such as power supplies, lighting, and industrial equipment.

Applications:

• Power Factor Correction (PFC) Circuits: Used to improve the power factor of AC-DC power supplies.
• Flyback Converters: Commonly found in isolated power supplies for consumer electronics and industrial applications.
• Forward Converters: Used in applications requiring high efficiency and power density.
• LED Lighting: Employed in LED drivers for efficient and reliable lighting solutions.
• Solar Inverters: Integrated into solar inverters for converting DC power from solar panels to AC power.

Features:

• 600V Drain-Source Voltage (VDS): Suitable for high-voltage applications.
• Low On-State Resistance (RDS(on)): Reduces conduction losses and improves efficiency. The RDS(on) for this part is 0.95 Ohms (typical).
• CoolMOS™ Technology: Provides low switching losses and high robustness.
• Integrated Gate Resistor: Simplifies gate drive design and reduces external component count.
• Improved dv/dt Ruggedness: Enhances the MOSFET's ability to withstand high voltage slew rates.

Benefits:

• High Efficiency: CoolMOS™ technology and low RDS(on) minimize power losses.
• Robust Performance: High voltage rating and improved dv/dt ruggedness ensure reliable operation.
• Simplified Design: Integrated gate resistor reduces the need for external components.
• Reduced System Cost: Lower power losses and improved thermal performance can reduce the need for heat sinks.
• Increased Power Density: CoolMOS™ technology allows for higher power density in power supply designs.

Technical Specifications:

The IPU60R950C6 has a drain-source voltage (VDS) of 600V, a continuous drain current (ID) of up to 6.9A, and a typical on-state resistance (RDS(on)) of 0.95Ω. It features a gate charge (Qg) of around 11 nC, contributing to faster switching speeds. The device is available in a PG-TO251-3 package and is RoHS compliant.