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Same model may have multiple batches, images only for reference.
IPW60R041C6 Real Image
Same model may have multiple batches, images only for reference.

IPW60R041C6

Part No IPW60R041C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 77.5A TO 247-3
Datasheet
IPW60R041C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 77.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 2.96mA
Max Gate Charge 290nC @ 10V
Max Input Capacitance 6530pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 481W (Tc)
Maximum Rds On at Id,Vgs 41 mOhm @ 44.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 086340-IPW60R041C6
Family Name IPW60R041C6
Introduction Date September 27, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPW60R041C6 CAD Model

Description

The Infineon Technologies IPW60R041C6 is a MOSFET transistor with an N-channel polarity.

  • Maximum Power Dissipation: 481W
  • Drain-Source Breakdown Voltage: 600V
  • Win Source Part Number: 086340
  • Packaging: Tube/rail
  • Suitable For: Various electronic devices, including those with a drive voltage of up to 10V

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Quantity Unit Price Ext. Price
10+ $5.5418 $55.4180
20+ $5.1911 $103.8220
30+ $5.0157 $150.4710
43+ $4.6650 $200.5950
56+ $4.4896 $251.4176
70+ $4.3142 $301.9940
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