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Same model may have multiple batches, images only for reference.
IPW60R045CPA Real Image
Same model may have multiple batches, images only for reference.

IPW60R045CPA

Part No IPW60R045CPA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 60A TO-247
Datasheet
IPW60R045CPA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 3mA
Max Gate Charge 190nC @ 10V
Max Input Capacitance 6800pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 431W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 44A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069116-IPW60R045CPA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPW60R045CPA CAD Model

Description

The Infineon Technologies 069116-IPW60R045CPA is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 600V and a Continuous Drain Current of 60A (Tc) @ 25°C.

  • Maximum Rds On: 45 mOhm @ 44A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO247-3
  • Suitable for: Use in Discrete Semiconductor Products
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • Power Dissipation: 431W (Tc)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0737 $52.2529
40+ $2.5220 $100.8800
62+ $2.4432 $151.4784
85+ $2.3644 $200.9740
110+ $2.2856 $251.4160
147+ $2.0491 $301.2177
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Availability: 37 pieces
MOQ: 17 pcs
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