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Same model may have multiple batches, images only for reference.
IPW65R037C6 Real Image
Same model may have multiple batches, images only for reference.

IPW65R037C6

Part No IPW65R037C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 83.2A TO247-3
Datasheet
IPW65R037C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 83.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 3.3mA
Max Gate Charge 330nC @ 10V
Max Input Capacitance 7240pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 37 mOhm @ 33.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069125-IPW65R037C6
Family Name IPW65R037C6
Introduction Date October 13, 2011
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPW65R037C6 CAD Model

Description

The Infineon Technologies IPW65R037C6 is a MOSFET transistor that is widely used in electronic devices.

  • Popularity: High
  • Suitable for: Various applications that require a MOSFET transistor
  • Feature: Reliable choice for regulating voltage in electronic devices

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Quantity Unit Price Ext. Price
4+ $15.6514 $62.6056
9+ $12.8424 $115.5816
14+ $12.4417 $174.1838
20+ $12.0397 $240.7940
25+ $11.6389 $290.9725
34+ $10.4343 $354.7662
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