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IPW65R048CFDA

Part No IPW65R048CFDA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V TO-247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 63.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 2.9mA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 7440pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 48 mOhm @ 29.4A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069126-IPW65R048CFDA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPW65R048CFDA CAD Model

Description

The Infineon Technologies IPW65R048CFDA is an N-channel MOSFET designed for high power applications.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 63.3A @ 25°C
  • On-Resistance: 48 mOhm @ 29.4A, 10V
  • Package: PG-TO247-3
  • Mounting: Through-hole
  • Power Dissipation: 500W (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 2.9mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 270nC @ 10V
  • Temperature Range: -40°C to 150°C (TJ)
  • Suitable for: Wide range of applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.2035 $52.8140
10+ $10.8336 $108.3360
15+ $10.4951 $157.4265
20+ $10.1565 $203.1300
26+ $9.8180 $255.2680
35+ $8.8023 $308.0805
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,800 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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