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Same model may have multiple batches, images only for reference.
IPW65R048CFDA Real Image
Same model may have multiple batches, images only for reference.

IPW65R048CFDA

Part No IPW65R048CFDA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V TO-247-3
Datasheet
IPW65R048CFDA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 63.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 2.9mA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 7440pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 48 mOhm @ 29.4A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069126-IPW65R048CFDA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPW65R048CFDA CAD Model

Description

The Infineon Technologies IPW65R048CFDA is an N-channel MOSFET designed for high power applications.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 63.3A @ 25°C
  • On-Resistance: 48 mOhm @ 29.4A, 10V
  • Package: PG-TO247-3
  • Mounting: Through-hole
  • Power Dissipation: 500W (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 2.9mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 270nC @ 10V
  • Temperature Range: -40°C to 150°C (TJ)
  • Suitable for: Wide range of applications

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Quantity Unit Price Ext. Price
4+ $13.2035 $52.8140
10+ $10.8336 $108.3360
15+ $10.4951 $157.4265
20+ $10.1565 $203.1300
26+ $9.8180 $255.2680
35+ $8.8023 $308.0805
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Availability: 9,800 pieces
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