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IRF1018EPBF

Part No IRF1018EPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 79A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 2290pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 47A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069238-IRF1018EPBF
Family Name IRF1018E
Introduction Date February 28, 2008
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1018EPBF CAD Model

Description

The Infineon Technologies IRF1018EPBF is a MOSFET transistor in a TO-220AB package.

  • Maximum Drain-Source Breakdown Voltage: 60V
  • Maximum Continuous Drain Current @ 25°C: 79A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Max Gate Charge: 69nC @ 10V
  • Maximum Rds On at Id,Vgs: 8.4 mOhm @ 47A, 10V
  • Popularity: Popular
  • Supply and Demand: Balanced
  • Alternative Parts (Cross-Reference): NP80N06MLG-S18-AY, FDP5645, BUK9515-60E,127
  • Introduction Date: February 28, 2008
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8578 $51.4680
145+ $0.7039 $102.0655
220+ $0.6819 $150.0180
305+ $0.6599 $201.2695
395+ $0.6379 $251.9705
525+ $0.5719 $300.2475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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