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Same model may have multiple batches, images only for reference.
IRF1324LPBF
Same model may have multiple batches, images only for reference.

IRF1324LPBF

Part No IRF1324LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 195A TO262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 7590pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 1.65 mOhm @ 195A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205287-IRF1324LPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRF1324LPBF CAD Model

Description

The Infineon Technologies 205287-IRF1324LPBF is a N-channel MOSFET with a maximum power dissipation of 300W (Tc).

  • Drain-Source Breakdown Voltage: 24V
  • Continuous Drain Current: 195A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Popularity: Medium

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