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Same model may have multiple batches, images only for reference.
IRF1324S-7PPBF Real Image
Same model may have multiple batches, images only for reference.

IRF1324S-7PPBF

Part No IRF1324S-7PPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 24V 429A D2PAK-7
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 24V
Id - Continuous Drain Current 240A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1mOhm at 160A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 252nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 7700pF at 19V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK (7-Lead)
Manufacturer Package TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186890-IRF1324S-7PPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1324S-7PPBF CAD Model

Description

The IRF1324S-7PPBF is an electronic component manufactured by Infineon Technologies.

  • Supply and Demand Status: limited
  • Type: high voltage MOSFET transistor
  • Vds - Drain-Source Breakdown Voltage: 24V
  • Id - Continuous Drain Current: 240A
  • Rds On (Maximum) @ Id, Vgs: 1mOhm @ 160A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 252nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 7700pF @ 19V

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