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IRF1324SPBF

Name: IRF1324SPBF
Brand: Infineon Technologies
SKU: 604203
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IRF1324SPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	HEXFET Power MOSFET \| MOSFET N-CH 24V 195A D2-PAK
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	24V
Id - Continuous Drain Current	195A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	1.65mOhm at 195A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	240nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	7590pF at 24V
Power Dissipation (Maximum)	300W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1186891-IRF1324SPBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF1324SPBF CAD Model

Alternative Products

Description

The Infineon Technologies MOSFET is a high-performance N-Channel transistor designed for use in Discrete Semiconductor Products.

Vds - Drain-Source Breakdown Voltage: 24V
Id - Continuous Drain Current: 195A
Rds On (Maximum) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Package: Tube
Power Dissipation (Maximum): 300W
Mounting Style: SMD
Gate Charge (Qg) (Maximum) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 7590pF @ 24V
Gate Source Voltage (Maximum): ±20V
Supply and Demand Status: Limited

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