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Same model may have multiple batches, images only for reference.
SQJ960EP-T1_GE3 Vishay
Same model may have multiple batches, images only for reference.

SQJ960EP-T1_GE3

Part No SQJ960EP-T1_GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 60V 8A / Mosfet Array 60V 8A 34W Surface Mount PowerPAK® SO-8 Dual
Datasheet
SQJ960EP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 735pF @ 25V
Power - Max 34W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJ960
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355741-SQJ960EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ960EP-T1_GE3 CAD Model

Description

The SQJ960EP-T1_GE3 is a MOSFET array manufactured by Vishay Siliconix.

  • Type: Dual N-channel MOSFET
  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 8A
  • On-Resistance: 36mOhm @ 5.3A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Gate Charge: 20nC @ 10V
  • Input Capacitance: 735pF @ 25V
  • Package: PowerPAK® SO-8 Dual
  • Mounting: Surface Mountable
  • ECCN: EAR99
  • MSL: 1 (Unlimited)
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9106 $52.3908
42+ $2.3882 $100.3044
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1643 $251.0588
155+ $1.9404 $300.7620
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Availability: 38,670 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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