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Same model may have multiple batches, images only for reference.
IPP09N03LA Real Image
Same model may have multiple batches, images only for reference.

IPP09N03LA

Part No IPP09N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A TO-220AB
Datasheet
IPP09N03LA Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1642pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 9.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069052-IPP09N03LA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP09N03LA CAD Model

Description

The Infineon Technologies MOSFET 069052-IPP09N03LA is a high power N-channel polarity component that is designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 50A @ 25°C
  • Maximum Rds On at Id,Vgs: 9.2 mOhm @ 30A, 10V
  • Package: PG-TO-220-3
  • Dimension: TO-220-3
  • Temperature Range: -55°C to 175°C (TJ)

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13+ $8.8854 $115.5102
21+ $8.6082 $180.7722
28+ $8.3299 $233.2372
36+ $8.0527 $289.8972
48+ $7.2199 $346.5552
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Availability: 3,880 pieces
MOQ: 6 pcs
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