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Same model may have multiple batches, images only for reference.
IRF1404LPBF
Same model may have multiple batches, images only for reference.

IRF1404LPBF

Part No IRF1404LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 162A TO-262
Datasheet
IRF1404LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 7360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 95A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 017413-IRF1404LPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1404LPBF CAD Model

Description

The Infineon Technologies IRF1404LPBF is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 162A at 25°C.

  • Package: TO-262 package
  • Popularity: medium popularity with limited supply and demand status
  • Win Source Part Number: 017413-IRF1404LPBF

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Availability: 1,000 pieces
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