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Same model may have multiple batches, images only for reference.
IRF1405STRLPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF1405STRLPBF

Part No IRF1405STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 55V 131A D2PAK
Datasheet
IRF1405STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 131A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 5480pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 101A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046408-IRF1405STRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF1405S
Introduction Date May 27, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF1405STRLPBF CAD Model

Description

The Infineon Technologies IRF1405STRLPBF is an N-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Win Source Part Number: 1046408-IRF1405STRLPBF
  • Package: Reel - TR
  • Maximum Power Dissipation: 200W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Gate Charge: 260nC @ 10V
  • Maximum Input Capacitance: 5480pF @ 25V

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