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Same model may have multiple batches, images only for reference.
IRF1407LPBF Real Image
Same model may have multiple batches, images only for reference.

IRF1407LPBF

Part No IRF1407LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A TO262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 7.8mOhm @ 78A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 25 V
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 150 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604220-IRF1407LPBF
Ultra Librarian 3D Model Ultra Librarian IRF1407LPBF CAD Model

Description

The IRF1407LPBF is a N-Channel MOSFET transistor from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Series: HEXFET
  • Drain to Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 100A @ 25°C
  • Rds On (Max): 7.8mOhm @ 78A and 10V
  • Mounting Type: Through-Hole
  • Package: TO-262-3 Long Leads, I²Pak
  • Gate Charge (Qg): 250nC @ 10V
  • Status: Obsolete

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