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Same model may have multiple batches, images only for reference.
IRF150P221AKMA1 Real Image
Same model may have multiple batches, images only for reference.

IRF150P221AKMA1

Part No IRF150P221AKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 186A TO247-3 / N-Channel 150 V 186A (Tc) 3.8W (Ta), 341W (Tc) Through Hole PG-TO247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series StrongIRFET™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 75 V
Power Dissipation (Max) 3.8W (Ta), 341W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP005537806,448-IRF150P221AKMA1
Standard Package 25
Win Source Part Number 1065482-IRF150P221AKMA1
Ultra Librarian 3D Model Ultra Librarian IRF150P221AKMA1 CAD Model

Description

The Infineon Technologies IRF150P221AKMA1 is a high-power MOSFET transistor that falls under the category of Discrete Semiconductor Products.

  • Win Source Part Number: 1065482-IRF150P221AKMA1
  • Drain to Source Voltage (Vdss): 150 V
  • Continuous Drain Current (Id): 186A (Tc) @ 25°C
  • Package: TO-247-3
  • Gate Charge (Qg): 100 nC @ 10 V

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