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Same model may have multiple batches, images only for reference.
IRF2805STRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF2805STRLPBF

Part No IRF2805STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 135A D2PAK
Datasheet
IRF2805STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 135A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 5110pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 104A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046420-IRF2805STRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF2805STRLPBF CAD Model

Description

Infineon Technologies 1046420-IRF2805STRLPBF is an active electronic component with medium popularity in the market.

  • Technology: MOSFET
  • Polarity: N-channel
  • Power Dissipation: 200W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 230nC @ 10V
  • Suitable for: use in discrete semiconductor products
  • Mounting Type: SMD (SMT) packaging
  • Designed to: provide reliable and efficient performance in electronic devices

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.2727 $52.3632
38+ $2.6853 $102.0414
58+ $2.6014 $150.8812
80+ $2.5175 $201.4000
103+ $2.4336 $250.6608
138+ $2.1818 $301.0884
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