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IRF2807ZL

Part No IRF2807ZL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A TO-262
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 53A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046427-IRF2807ZL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF2807ZL CAD Model

Description

The Infineon Technologies IRF2807ZL is an obsolete (EOL) N-channel MOSFET transistor with a maximum drain-source breakdown voltage of 75V and a continuous drain current of 75A (Tc) @ 25°C.

  • Rds On (Max) @ Id,Vgs: 9.4 mOhm @ 53A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-262
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Input Capacitance (Max): 3270pF @ 25V
  • Gate-Source Voltage (Max): ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2904 $51.6160
95+ $1.0588 $100.5860
150+ $1.0258 $153.8700
205+ $0.9927 $203.5035
265+ $0.9596 $254.2940
350+ $0.8603 $301.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 583 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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