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IRF2807ZLPBF Infineon Technologies IRF2807ZLPBF Real Image
Same model may have multiple batches, images only for reference.
IRF2807ZLPBF Infineon Technologies IRF2807ZLPBF Real Image
IRF2807ZLPBF Infineon Technologies IRF2807ZLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF2807ZLPBF

Part No IRF2807ZLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A TO-262
Datasheet
IRF2807ZLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 53A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046428-IRF2807ZLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF2807
Introduction Date Jun 30, 2004
ECCN EAR99
Country of Origin Mexico
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IRF2807ZLPBF CAD Model

Description

The Infineon Technologies IRF2807ZLPBF is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 75V and a continuous drain current of 75A (Tc).

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 75A (Tc)
  • Application: Power Supplies, Motor Control, Lighting Ballasts
  • Package: TO-262
  • Power Dissipation: 170W (Tc)
  • Input Capacitance: 3270pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Status: Obsolete (EOL)
  • Estimated EOL Date: N/A

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