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Same model may have multiple batches, images only for reference.
IRF2907ZLPBF
Same model may have multiple batches, images only for reference.

IRF2907ZLPBF

Part No IRF2907ZLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A TO262
Datasheet
IRF2907ZLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 7500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205293-IRF2907ZLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF2907ZLPBF CAD Model

Description

The IRF2907ZLPBF is a MOSFET transistor manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 300W
  • Drain-Source Breakdown Voltage: 75V
  • Operating Temperature: -55°C to 175°C
  • Maximum Gate-Source Voltage: ±20V
  • Polarity: N-channel MOSFET
  • Drive Voltage: 10V
  • Status: obsolete (EOL)

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49+ $2.3978 $117.4922
75+ $2.3227 $174.2025
103+ $2.2476 $231.5028
133+ $2.1726 $288.9558
178+ $1.9485 $346.8330
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