IRF3315STRRPBF

Part No IRF3315STRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 21A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 94W (Tc)
Maximum Rds On at Id,Vgs 82 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046443-IRF3315STRRPBF
Popularity Medium
Supply and Demand Status Balance

Description

The Infineon Technologies 1046443-IRF3315STRRPBF is a MOSFET transistor designed for use in discrete semiconductor products. This N-channel MOSFET has a maximum power dissipation of 3.8 W (Ta) and 94 W (Tc). The device has a breakdown voltage of 150 V and a continuous drain current of 21 A (Tc) at 25°C. The gate-source threshold voltage is 4 V at 250μA, and the maximum gate charge is 95nC at 10V. The maximum input capacitance is 1300pF at 25V, and the maximum Rds On at Id,Vgs is 82 mOhm at 12A, 10V. The Infineon Technologies 1046443-IRF3315STRRPBF is mounted using SMD (SMT) technology and is packaged in a D2PAK TO-263-3 package. This product is obsolete (EOL) and has a medium popularity.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
60+ $0.8670 $52.0200
145+ $0.7120 $103.2400
220+ $0.6890 $151.5800
300+ $0.6670 $200.1000
390+ $0.6450 $251.5500
520+ $0.5780 $300.5600
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 2,089 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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