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IRF3707LPBF

Part No IRF3707LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 62A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1990pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 87W (Tc)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046457-IRF3707LPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRF3707LPBF CAD Model

Description

The Infineon Technologies IRF3707LPBF is an N-Channel MOSFET with a maximum power dissipation of 87W (Tc) and a continuous drain current of 62A (Tc) at 25°C.

  • Power Dissipation: 87W (Tc)
  • Continuous Drain Current: 62A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 19nC @ 4.5V
  • Maximum Rds On @ Id, Vgs: 12.5 mOhm @ 15A, 10V
  • Maximum Input Capacitance: 1990pF @ 15V
  • Package: TO-262
  • Temperature Range: -55°C to 175°C (TJ)
  • Quantity per Package: 50

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