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Same model may have multiple batches, images only for reference.
IRF3707ZL Real Image
Same model may have multiple batches, images only for reference.

IRF3707ZL

Part No IRF3707ZL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 59A TO-262 / Trans MOSFET N-CH 30V 59A 3-Pin(3+Tab) TO-262
Datasheet
IRF3707ZL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.25V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 1210pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 57W (Tc)
Rds On (Maximum) @ Id, Vgs 9.5 mOhm @ 21A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-262
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 777012-IRF3707ZL
Popularity Medium
Supply and Demand Status Balance
Family Name IRF3707
Introduction Date December 04, 2003
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF3707ZL CAD Model

Description

The Infineon Technologies IRF3707ZL is a HEXFET MOSFET that is designed for use in a wide range of applications, including power supplies, motor control, and lighting applications.

  • Continuous Drain Current: 59A
  • Power Dissipation: 57W
  • Channel Type: N
  • Drain-source Voltage: 30V
  • Gate Charge: 15nC @ 4.5V
  • Input Capacitance: 1210pF @ 15V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA

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