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Same model may have multiple batches, images only for reference.
IRF3707ZSPBF Real Image
Same model may have multiple batches, images only for reference.

IRF3707ZSPBF

Part No IRF3707ZSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 59A D2PAK
Datasheet
IRF3707ZSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1210pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046467-IRF3707ZSPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3707ZSPBF CAD Model

Description

The Infineon Technologies IRF3707ZSPBF MOSFET is a surface-mount device with an N-channel polarity and a drain-source breakdown voltage of 30V.

  • Mounting Type: Surface-Mount
  • Channel Polarity: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: Up to 59A @ 25°C (Tc)
  • Maximum Power Dissipation: 57W (Tc)
  • Gate-Source Threshold Voltage: 2.25V @ 25μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Package: D2PAK
  • Leads/Tab: Two leads and a tab
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand: Limited

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65+ $1.5523 $100.8995
100+ $1.5038 $150.3800
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180+ $1.4068 $253.2240
240+ $1.2612 $302.6880
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