IRF3707ZSPBF

Part No IRF3707ZSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 59A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1210pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046467-IRF3707ZSPBF
Popularity Medium
Supply and Demand Status Limited

Description

The Infineon Technologies IRF3707ZSPBF MOSFET is a surface-mount device with an N-channel polarity and a drain-source breakdown voltage of 30V. It can handle a continuous drain current of up to 59A at 25°C (Tc) and has a maximum power dissipation of 57W (Tc). The gate-source threshold voltage is 2.25V at 25μA, and the maximum gate charge is 15nC at 4.5V. The IRF3707ZSPBF is packaged in a D2PAK case with two leads and a tab and can operate in a temperature range of -55°C to 175°C (TJ). This MOSFET is part of the Discrete Semiconductor Products category and has a medium popularity and limited supply and demand.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
190+ $0.2680 $50.9200
455+ $0.2200 $100.1000
705+ $0.2130 $150.1650
975+ $0.2060 $200.8500
1,260+ $0.1990 $250.7400
1,680+ $0.1790 $300.7200
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 51,000 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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