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Same model may have multiple batches, images only for reference.
IRF3707ZSTRLPBF
Same model may have multiple batches, images only for reference.

IRF3707ZSTRLPBF

Part No IRF3707ZSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 59A
Datasheet
IRF3707ZSTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1210pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 136132-IRF3707ZSTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3707ZSTRLPBF CAD Model

Description

The Infineon Technologies IRF3707ZSTRLPBF MOSFET is a highly efficient N-channel power transistor with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 59A at 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current @ 25°C: 59A @ 25°C
  • Maximum Power Dissipation: 57W

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