IRF3711L

Part No IRF3711L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 110A TO-262
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 2980pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046485-IRF3711L
Popularity Medium
Supply and Demand Status Balance

Description

The Infineon Technologies IRF3711L is an N-Channel MOSFET transistor with a maximum power dissipation of 3.1W (Ta) and 120W (Tc). It has a drain-source breakdown voltage of 20V and a continuous drain current of 110A (Tc) at 25°C. The device has a through hole mounting and a gate-source threshold voltage of 3V @ 250μA. It is packaged in a TO-262 case and is suitable for use in power supplies and motor control circuits. The temperature range for operating is -55°C to 150°C (TJ).

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
24+ $2.1670 $52.0080
57+ $1.7780 $101.3460
88+ $1.7230 $151.6240
120+ $1.6670 $200.0400
156+ $1.6120 $251.4720
208+ $1.4450 $300.5600
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 410 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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