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Same model may have multiple batches, images only for reference.
IRF3711L Real Image
Same model may have multiple batches, images only for reference.

IRF3711L

Part No IRF3711L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 110A TO-262
Datasheet
IRF3711L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 2980pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046485-IRF3711L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3711L CAD Model

Description

The Infineon Technologies IRF3711L is an N-Channel MOSFET transistor with a maximum power dissipation of 3.1W (Ta) and 120W (Tc).

  • Channel Type: N-Channel
  • Power Dissipation: 3.1W (Ta) and 120W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 110A (Tc) @ 25°C
  • Mounting Type: Through Hole
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Package: TO-262
  • Applications: Power Supplies and Motor Control Circuits
  • Temperature Range: -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
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57+ $2.0536 $117.0552
88+ $1.9901 $175.1288
120+ $1.9254 $231.0480
156+ $1.8619 $290.4564
208+ $1.6690 $347.1520
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MOQ: 24 pcs
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