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Same model may have multiple batches, images only for reference.
IRF3717TRPBF
Same model may have multiple batches, images only for reference.

IRF3717TRPBF

Part No IRF3717TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 20A 8-SOIC
Datasheet
IRF3717TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.45V @ 250μA
Max Gate Charge 33nC @ 4.5V
Max Input Capacitance 2890pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017427-IRF3717TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3717TRPBF CAD Model

Description

The Infineon Technologies IRF3717TRPBF is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 20A @ 25°C
  • Maximum Rds On @ Id,Vgs: 4.4 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 2.45V @ 250μA
  • Maximum Gate Charge: 33nC @ 4.5V
  • Maximum Input Capacitance: 2890pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 2.5W (Ta)
  • Temperature Range: -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
75+ $0.6818 $51.1350
180+ $0.5595 $100.7100
280+ $0.5420 $151.7600
385+ $0.5245 $201.9325
495+ $0.5070 $250.9650
660+ $0.4546 $300.0360
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