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Same model may have multiple batches, images only for reference.
IRF3808SPBF
Same model may have multiple batches, images only for reference.

IRF3808SPBF

Part No IRF3808SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 106A D2PAK / Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK Tube
Datasheet
IRF3808SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 5310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 82A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205295-IRF3808SPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRF3808S
Introduction Date July 02, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF3808SPBF CAD Model

Description

The Infineon Technologies IRF3808SPBF is a discrete semiconductor product that is designed to meet the needs of electronic applications.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 106A (Tc)
  • Max Rds On @ Id,Vgs: 7 mOhm @ 82A, 10V
  • Max Gate Charge: 220nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $40.3395 $80.6790
4+ $33.0988 $132.3952
6+ $32.0651 $192.3906
8+ $31.0302 $248.2416
10+ $29.9965 $299.9650
13+ $26.8930 $349.6090
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Availability: 5,471 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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