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IRF40H233ATMA1

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Part No	IRF40H233ATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 40V 35A 8PQFN / Mosfet Array 2 N-Channel (Dual) 40V 65A (Tc) 3.8W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-4
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr	Infineon Technologies
Series	StrongIRFET™
Package	Tape & Reel (TR)
Product Status	Last Time Buy
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Rds On (Max) @ Id, Vgs	6.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 20V
Power - Max	3.8W (Ta), 50W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting	SMD (SMT)
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-4
Base Product Number	IRF40
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	448-IRF40H233ATMA1TR,SP005537810
Standard Package	4,000
Win Source Part Number	1065488-IRF40H233ATMA1
Ultra Librarian 3D Model	Ultra Librarian IRF40H233ATMA1 CAD Model

Alternative Products

Description

The Infineon Technologies IRF40H233ATMA1 is a dual N-Channel MOSFET that belongs to the StrongIRFET series.

Package: Tape and reel
Standard Package: 4,000 units
FET Feature: Standard
Drain to Source Voltage: 40V
Continuous Drain Current @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
HTSUS: 8541.29.0095
Win Source Part Number: 1065488-IRF40H233ATMA1

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