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IRF4905LPBF

Part No IRF4905LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 42A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 3500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 017431-IRF4905LPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF4905LPBF CAD Model

Description

The Infineon Technologies TO-262 MOSFET is a P-Channel MOSFET that has a Drain-Source Breakdown Voltage of 55V and a Continuous Drain Current of 42A at 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 20 mOhm @ 42A, 10V
  • Maximum Power Dissipation: 170W (Tc)
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 3500pF @ 25V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.6391 $50.1429
47+ $2.1655 $101.7785
72+ $2.0978 $151.0416
99+ $2.0301 $200.9799
128+ $1.9625 $251.2000
171+ $1.7594 $300.8574
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,730 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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