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IRF4905PBF

Part No IRF4905PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 74A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 3400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 091644-IRF4905PBF
Family Name IRF4905
Introduction Date November 06, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF4905PBF CAD Model

Description

The Infineon Technologies 091644-IRF4905PBF is a P-Channel MOSFET transistor with a drain-source breakdown voltage of 55V and continuous drain current at 25°C of 74A (Tc).

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 74A (Tc)
  • Maximum Power Dissipation: 200W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4396 $50.5540
245+ $0.4118 $100.8910
380+ $0.3979 $151.2020
545+ $0.3700 $201.6500
705+ $0.3561 $251.0505
880+ $0.3422 $301.1360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 77,540 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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