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Same model may have multiple batches, images only for reference.
IRF530NL Real Image
Same model may have multiple batches, images only for reference.

IRF530NL

Part No IRF530NL
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 17A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 17A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 90mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 37nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 920pF at 25V
Power Dissipation (Maximum) 3.8W, 70W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187047-IRF530NL
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF530NL CAD Model

Description

The Infineon Technologies IRF530NL is a MOSFET transistor with N-channel polarity and a TO-262 package.

  • Product Name: IRF530NL
  • Manufacturer: Infineon Technologies
  • Polarity: N-channel
  • Package: TO-262
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 17A
  • Maximum Power Dissipation: 70W
  • Gate Charge @ 10V: 37nC
  • Input Capacitance @ 25V: 920pF
  • Operating Temperature Range: -55°C to 175°C
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (unlimited)

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