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Same model may have multiple batches, images only for reference.
IRF540ZSTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF540ZSTRLPBF

Part No IRF540ZSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 36A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1770pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 92W (Tc)
Maximum Rds On at Id,Vgs 26.5 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046517-IRF540ZSTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF540ZSTRLPBF CAD Model

Description

The Infineon Technologies IRF540ZSTRLPBF MOSFET is a high-performance N-channel power MOSFET that is widely used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 36A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 63nC @ 10V
  • Maximum Rds On @ Id,Vgs: 26.5 mOhm @ 22A, 10V
  • Package: D2PAK case, which is a TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.1428 $55.7140
11+ $9.1429 $100.5719
17+ $8.8571 $150.5707
24+ $8.5714 $205.7136
31+ $8.2857 $256.8567
41+ $7.4286 $304.5726
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MOQ: 5 pcs
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