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Same model may have multiple batches, images only for reference.
IRF5804TRPBF
Same model may have multiple batches, images only for reference.

IRF5804TRPBF

Part No IRF5804TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 2.5A 6-TSOP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 8.5nC @ 10V
Max Input Capacitance 680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 198 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro6(TSOP-6)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 103827-IRF5804TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian IRF5804TRPBF CAD Model

Description

The Infineon Technologies IRF5804TRPBF is a P-Channel MOSFET transistor that is designed for use in a range of applications, including power management and switching circuits.

  • Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current (25°C): 2.5A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On: 198 mOhm @ 2.5A and 10V
  • Case/Package: Micro6(TSOP-6) case
  • Mounting Type: surface-mount technology (SMT) mounting
  • Supply and Demand Status: balanced, with 3k pieces per package

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2529 $58.1670
560+ $0.2079 $116.4240
865+ $0.2010 $173.8650
1,195+ $0.1940 $231.8300
1,535+ $0.1883 $289.0405
2,055+ $0.1686 $346.4730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,300 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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