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IRF5805TRPBF

Part No IRF5805TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3.8A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 511pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 98 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro6(TSOP-6)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 113200-IRF5805TRPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF5805TRPBF CAD Model

Description

The Infineon Technologies IRF5805TRPBF is a MOSFET discrete semiconductor product that is suitable for power management applications in industrial settings.

  • Supply and Demand Status: balanced
  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 113200
  • Category: Discrete Semiconductor Products
  • Polarity: P-Channel
  • Power Dissipation: 2W @ Ta
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 3.8A @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1445 $50.5750
845+ $0.1186 $100.2170
1,310+ $0.1149 $150.5190
1,800+ $0.1112 $200.1600
2,330+ $0.1075 $250.4750
3,115+ $0.0964 $300.2860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,950 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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