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Same model may have multiple batches, images only for reference.
IRF5M3710
Same model may have multiple batches, images only for reference.

IRF5M3710

Part No IRF5M3710
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 29 A
Drain to Source Breakdown Voltage 100 V
Drain to Source Resistance 30 mΩ
Drain to Source Voltage (Vdss) 100 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 125 W
Radiation Hardening No
RoHS Compliant
Schedule B 8541290080
Win Source Part Number 1022146-IRF5M3710
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF5M3710 CAD Model

Description

The IRF5M3710 is a single N-channel MOSFET transistor that is widely used in various applications.

  • Drain to Source Voltage (Vdss): 100 V
  • Continuous Drain Current (Id): 29 A
  • Rds On: 30 mΩ
  • Gate to Source Voltage (Vgs): 20 V
  • Power Dissipation: 125 W
  • Mounting: Through-Hole
  • Pins: 3
  • Operating Temperature: Max 150°C, Min -55°C
  • RoHS: Compliant (Contains Lead)
  • Alternative Parts: IRFP150NPBF, IRF1310NPBF, IRF540ZPBF, STP35NF10, IRF150, and HUF75637P3

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