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Same model may have multiple batches, images only for reference.
IRF5N5210SCX
Same model may have multiple batches, images only for reference.

IRF5N5210SCX

Part No IRF5N5210SCX
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) -31 A
Drain to Source Breakdown Voltage -100 V
Drain to Source Resistance 60 mΩ
Drain to Source Voltage (Vdss) -100 V
Gate to Source Voltage (Vgs) 20 V
Height 3.58 mm
Max Junction Temperature (Tj) 150 °C
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Channels 1
Number of Pins 3
On-State Resistance 100 mΩ
Packaging Bulk
Power Dissipation 125 W
Radiation Hardening No
RoHS Compliant
Turn-Off Delay Time 103 ns
Turn-On Delay Time 28 ns
Win Source Part Number 1001110-IRF5N5210SCX
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF5N5210SCX CAD Model

Description

The IRF5N5210SCX is a transistor-FET manufactured by Infineon Technologies. It is a surface mount device with a maximum operating temperature of 150°C. It has a drain to source voltage (Vdss) of -100 V and a power dissipation of 125 W.

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