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IRF5YZ48CM

Part No IRF5YZ48CM
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 18 A
Drain to Source Breakdown Voltage 55 V
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Packaging Bulk
Power Dissipation 75 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1023291-IRF5YZ48CM
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF5YZ48CM CAD Model

Description

The device is in a bulk packaging with a power dissipation of 75W and 3 pins.

  • Transistor Type: MOSFET-RF
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Drain to Source Breakdown Voltage: 55V
  • Gate to Source Voltage: 20V

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