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Same model may have multiple batches, images only for reference.
IRF6215L-103PBF Real Image
Same model may have multiple batches, images only for reference.

IRF6215L-103PBF

Part No IRF6215L-103PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 13A TO-262 / POWER MOSFET
Datasheet
IRF6215L-103PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 66nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 860pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.8W (Ta), 110W (Tc)
Rds On (Maximum) @ Id, Vgs 290 mOhm @ 6.6A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-262
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 777016-IRF6215L-103PBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRF6215L
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF6215L-103PBF CAD Model

Description

The Infineon Technologies HEXFET MOSFET is a Discrete Semiconductor Product that comes in a TO-262 package.

  • Channel Type: P-Channel
  • Drain-Source Voltage: 150V
  • Continuous Drain Current: 13A @ 25°C
  • Input Capacitance: 860pF @ 25V
  • Gate Charge: 66nC @ 10V
  • Power Dissipation: 3.8W (Ta), 110W (Tc)
  • Estimated EOL date: Obsolete
  • Popularity: Medium

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