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IRF6218PBF Real Image1 IRF6218PBF Real Image2
Same model may have multiple batches, images only for reference.
IRF6218PBF Real Image1 IRF6218PBF Real Image2
IRF6218PBF Real Image1 IRF6218PBF Real Image2
Same model may have multiple batches, images only for reference.

IRF6218PBF

Part No IRF6218PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 27A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2210pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205301-IRF6218PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6218PBF CAD Model

Description

The Infineon Technologies IRF6218PBF is a P-Channel MOSFET that comes in a TO-220AB case/package.

  • Category: Discrete Semiconductor Product
  • Maximum Power Dissipation: 250W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Temperature Range: -55°C to 175°C (TJ)
  • Continuous Drain Current: 27A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Rds On at Id, Vgs: 150 mOhm @ 16A, 10V
  • Status: Active
  • Popularity: Medium
  • Supply and Demand Status: Limited

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29+ $5.3209 $154.3061
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68+ $4.4627 $303.4636
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