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Same model may have multiple batches, images only for reference.
IRF6603 Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF6603

Part No IRF6603
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 27A DIRECTFET
Datasheet
IRF6603 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)Cut Tape (CT)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 4.5 V
Vgs (Max) +20V, -12V
Input Capacitance (Ciss) (Max) @ Vds 6590 pF @ 15 V
Power Dissipation (Max) 3.6W (Ta), 42W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MT
Package / Case DirectFET™ Isometric MT
Standard Package 4,800 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 159680-IRF6603
Ultra Librarian 3D Model Ultra Librarian IRF6603 CAD Model

Description

The Infineon Technologies 159680-IRF6603 is a single N-Channel MOSFET transistor.

  • Series: HEXFET
  • Packaging: Tape & Reel (TR) Cut Tape (CT)
  • Package Quantity: 4,800 pieces
  • Mounting: Surface Mount
  • Package/Case: DirectFET™ Isometric MT
  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current: 27A @ 25°C
  • Maximum On-Resistance: 3.4mOhm @ 25A and 10V
  • Gate Charge: 72nC @ 4.5V
  • Temperature Range: -40°C to 150°C
  • MSL Level: 3
  • REACH Status: Unaffected
  • HTSUS Code: 8541.29.0095
  • Manufacturer: Infineon Technologies

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188+ $1.8516 $348.1008
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Availability: 6,970 pieces
MOQ: 21 pcs
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