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Same model may have multiple batches, images only for reference.
IRF6611TRPBF
Same model may have multiple batches, images only for reference.

IRF6611TRPBF

Part No IRF6611TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 32A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 32A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 56nC @ 4.5V
Max Input Capacitance 4860pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.9W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 27A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 110809-IRF6611TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4,800
Ultra Librarian 3D Model Ultra Librarian IRF6611TRPBF CAD Model

Description

The Infineon Technologies IRF6611TRPBF is an N-channel MOSFET with a drain-source breakdown voltage of 30V.

  • Continuous Drain Current: 32A (Ta), 150A (Tc) @ 25°C
  • Maximum Rds On at Id, Vgs: 2.6 mOhm @ 27A, 10V
  • Mounting Method: SMD (SMT)
  • Package: DIRECTFET MX
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Temperature Range: -40°C to 150°C (TJ)
  • Category: Obsolete (EOL) electronic components
  • Popularity: Medium
  • Supply and Demand Status: balanced

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120+ $0.9656 $115.8720
190+ $0.9356 $177.7640
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445+ $0.7854 $349.5030
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Availability: 3,400 pieces
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