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Same model may have multiple batches, images only for reference.
IRF6618TR1PBF
Same model may have multiple batches, images only for reference.

IRF6618TR1PBF

Part No IRF6618TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A DIRECTFET
Datasheet
IRF6618TR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 250μA
Max Gate Charge 65nC @ 4.5V
Max Input Capacitance 5640pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MT
Dimension DirectFET Isometric MT
Win Source Part Number 119549-IRF6618TR1PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6618TR1PBF CAD Model

Description

The Infineon Technologies IRF6618TR1PBF is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 30A @ 25°C.

  • Application: Designed for use in power management applications
  • Maximum Rds On: 2.2 mOhm @ 30A and 10V
  • Gate-Source Threshold Voltage: 2.35V @ 250μA
  • Maximum Gate Charge: 65nC @ 4.5V
  • Package: DIRECTFET MT package
  • Lifecycle Status: Obsolete (EOL)
  • Supply and Demand Status: Limited supply and demand status in the open market.

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24+ $4.9526 $118.8624
37+ $4.7979 $177.5223
50+ $4.6431 $232.1550
65+ $4.4883 $291.7395
87+ $4.0240 $350.0880
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